Are patents and not sharing knowledge, a huge problem?
Should finding a new sustainable source of energy be more important than fame and money?
Can someone please look at the VO2 nano tubes, think condition for D-D fusion (if possible in lattices) are ideal inside of them.
-in 5 minutes the tubes are full loaded with hydrogen (near 100% saturation but not tested with deuterium).
-Hydrogen atoms are aligned in a sine inside the tubes.
-And loaded tubes are high temp super conductive.
All the things are seen in lenr reactions.
I don’t have the equipment or knowledge to do tests with them!
 Hideaki KOIKE, Toshimichi NONAKA, Kunio OKIMURA,Study on Crystalline Structural Phase Transition of VO2 Films Grown on c-Al2O3 Substrate against Temperaturehttps://www.jstage.jst.go.jp/article/jvsj2/52/3/52_3_167/_pdf/-char/ja
This is a development of transistor to control the VO2 property of Metal-insulator phase change.
Vanadium dioxide (VO2) is a phase transition oxide whose resistance value changes by 4 to 5 orders of magnitude at a relatively low temperature of around 341 K, and is expected to be applied to various devices.
Vanadium dioxide (VO2) has attracted much interest as potential applications to electrical- and
optical-switching devices, because VO2 exhibits abrupt changes of electrical resistivity and
infrared transmission at metal-insulator transition temperature (TMI) of 68 o
C. However, for
the practical uses of VO2, it is necessary to reduce the TMI down to room temperature (RT);
on-demand control of TMI by solid-state thin-film device will open the new pathway for the
development of innovative electro-optical devices. Here we focused on the proton doping into
VO2 because the protonation of VO2 should be the most ideal to modulate their electro-optical
properties due to its intrinsic non-volatile operation. However, for the protonation of VO2,
high-temperature annealing treatment is imperative to modulate the electro-optical properties,
and it is unsuited for practical purposes due to the annealing process. In this study, we propose
an all-solid-state thin-film transistor (TFT) for on-demand control of TMI for VO2 thin films
by water-electrolysis-induced protonation/deprotonation at RT. We fabricated TFT structure
with a gate insulator of water-infiltrated nano-porous glass. The gate insulator consists of an
amorphous 12CaO·7Al2O3 thin film with nano-porous structure (CAN) and water vapor in air is
automatically absorbed into the CAN film due to the capillary effect of the interconnected nanopores; water electrolysis can be used in the solid gate insulator. We expected that CAN-gated
TFTs with combination of high electric field and protonation through water electrolysis should
provide a better approach to control TMI of VO2. For gate voltage application, water electrolysis
and protonation/deprotonation of VO2 film surface occurred, leading to reversible metalinsulator conversion of ~10-nm-thick VO2 layer. The protonation was clearly accompanied by
the structural change from monoclinic (insulator) to tetragonal (metal) phase. Present results
offer a new route to all solid-state smart windows for on-demand infrared shielding