I don't know what you mean by "the receiver"
Processing silicon wafers is about changing the electrical characteristics of the silicon by doping.
This is done in successive steps.
The first step is applying a thin silicon-oxide layer.
Then photoresist is put on top of the silicon-oxide.
Then a light pattern is projected on the photoresist.
This light can be of different wafelengths, however the shorter wavelengths will allow for smaller dimensions.
Thus EUV will allow for circuits which have the smallest dimensions or the most advanced IC's.
The photoresist will be hardened or stay more liquid between the areas where the light was projected and the areas where no light was projected.
Then the more liquid areas will be chemical removed, this leaves open areas giving access to the silicon oxide.
Then an acid is used to etch away the silicon-oxide.
Thus the etching is not by the EUV but by the acid.
After removing the silicon-oxide layer you now can by diffusion of gases change the electric properties of the underlying silicon.